Photodecomposition of water to H2 by multiple bandgap thin films in a photovoltaic system(2/3)
Date Issued
2004
Date
2004
Author(s)
萬本儒
DOI
922214E002009
Abstract
For the purpose of fabricating the multiple bandgap films for the production of hydrogen from photo-decomposition of water in this research, Fe2O3 and Si were chosen as the materials, and ITO was chosen as the transparent middle layer for ohmic contact. Due to the n-type intrinsic behavior of Fe2O3 and the maturity of the Si and ITO technology, the p-Fe2O3 film preparation was the key point of this research. The p-Fe2O3 film was fabricated by RF magnetron sputtering process. From our previous results, it was demonstrated that the p-Fe2O3 sputtering target can be made by Mg doping. During the research in this year, in order to fabricate a p-Fe2O3 film with a good photo-efficiency, the sputtering factors were investigated. The films were characterized by UV-Vis, X-ray diffraction, α-step , EDS and photo/dark ratio. The results were shown that the composition of the plasma gas was an important factor for the p-Fe2O3 film sputtering. The more Ar in the plasma gas, the smaller bandgap of the p-Fe2O3 film was obtained. It has been concluded that the p-Fe2O3 film with the highest photo/dark ratio and an optical bandgap (1.8eV) was made by sputtering under O2 plasma gas for the film thickness of about 300nm.
Subjects
multiple bandgap
photoelectrochemical water
splitting
splitting
hydrogen
Fe2O3
thin film
SDGs
Publisher
臺北市：國立臺灣大學化學工程學系暨研究所
Type
report
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