A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
Journal
IEEE MTT-S International Microwave Symposium Digest
Start Page
564
End Page
567
ISSN
0149645X
Date Issued
2025-06-15
Author(s)
Chung, Jung-Tao
Hsu, Keng-Li
Chang, Cheng-Te
Feng, Kai-Chen
Li, Jyun-Hao
Tu, Shan-Yu
Chou, Tung-Yao
Tsai, Shu-Hsiao
Lin, Cheng-Kuo
Abstract
A two-stage, single-ended amplifier has been designed for 6G FR3 band handset application in a commercial 6-inch GaAs HBT process. At 12 GHz, the power stage of this amplifier achieves an output power of 32 dBm with power added efficiency (PAE) of 57.9% under 6.5 V operation. Using this HBT array of power stage to fabricate a two-stage amplifier, PAE can be further improved to 55% with a gain of 24 dB. Combining two two-stage PA by power combiner, the measured output power is 34.4 dBm with a gain of 24 dB and PAE of 50%, which is among the highest reported for GaAs HBT amplifiers under mobile handset operation voltage at this frequency.
Event(s)
2025 IEEE/MTT-S International Microwave Symposium, IMS 2025
Subjects
6G FR3
GaAs HBT
power amplifiers
thermal management
SDGs
Publisher
IEEE
Type
conference paper