The Effect of Voltage-Dependent Charge-Removing Mechanism on the Optical Modulation Bandwidths of Light-Emitting Transistors
Journal
IEEE Transactions on Electron Devices
Date Issued
2015
Author(s)
Abstract
The optical modulation bandwidths of light-emitting transistors (LETs) at different bias conditions are measured and compared to investigate the influence of the voltage-dependent charge-removing mechanism within the active region. The modulation bandwidth dramatically increases from 338 MHz to 1.338 GHz when the transistor is operated from a saturation mode to a forward-active mode under a constant current of 2 mA. We show that gigahertz spontaneous bandwidths of LETs depend not only on the input currents, which is similar to light-emitting diodes, but are also strongly related to the voltages of a base-collector junction. By varying the reverse bias of the collector terminal, different charge distribution profiles can be established within the active region to perform distinct optical modulation bandwidths.
SDGs
Type
journal article