Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure
Journal
Physical Review B
Journal Volume
101
Journal Issue
7
Date Issued
2020
Author(s)
Abstract
We investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal Sxyd of v=1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field). © 2020 American Physical Society.
Other Subjects
Magnetic fields; Temperature distribution; Electron diffusion; Hole densities; Linear temperature dependence; Measurement configuration; Sweeping magnetic fields; Thermoelectric transport; Thermoelectric transport properties; Two dimensional hole system; Diffusion
Type
journal article