Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states

An analytical drain current model for a-Si: H TFTs obtained by considering deep and tail states simultaneously is presented. Using an effective temperature approach, the localised deep and tail states have been considered in the DC model such that no approximations are needed. As verified by the published data, this analytical DC model provides an accurate prediction on the drain current characteristics of an a- Si: H thin film transistor. © 1993, The Institution of Electrical Engineers. All rights reserved.