Electron transport in InxGa1-xN films
Date Issued
2007
Date
2007
Author(s)
Chen, Yen-Jung
DOI
en-US
Abstract
This thesis focuses on electron transport properties of InxGa1-xN thin films. The transport measurements were performed on InxGa1-xN thin films over a wide temperature range (12 K< T < 315 K). The four independent van der Pauw measurements, each with 90∘rotation of contact configuration to measure the resistance of , were used. These samples show a tendency from semiconductor to metal with increasing x of InxGa1-xN , indicating InN electron transport properties are better than GaN. The resistivity of InN was best fitted with Block T^5 law. This supports the high In composition films can be considered as degenerate electron system in which the Fermi level is much higher than conduction band over the whole temperature range.
Taking this characteristic into consideration, in this thesis the phenomenon of the electron-acoustic phonon interactions were investigated under the low temperature condition.
Subjects
氮化銦鎵
電子傳輸
InGaN
InxGa1-xN
Type
thesis
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