We have studied the growth of the
GaAsSb/GaAs MQWs on GaAs by
solid-source molecular beam epitaxy The
emitting wavelength of GaAsSb/GaAs
MQWs is 1.27μm with FWHM of 66.6 meV
at room temperature. And room temperature
1.28μm lasers have been fabricated, and the
threshold current density is as low as
210A/cm2.
