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  4. Low-temperature synthesis of high-quality graphene by controlling the carbon-hydrogen ratio of the precursor
 
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Low-temperature synthesis of high-quality graphene by controlling the carbon-hydrogen ratio of the precursor

Journal
Nano Express
Journal Volume
3
Journal Issue
1
Date Issued
2022
Author(s)
Huang J.-Z
Ni I.-C
Hsu Y.-H
Li S.-W
Chan Y.-C
Yang S.-Y
Lee M.-H
Shue S.-L
Chen M.-H
CHIH-I WU  
DOI
10.1088/2632-959X/ac3388
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85129260077&doi=10.1088%2f2632-959X%2fac3388&partnerID=40&md5=e1bfd43195405332070ed8f8152fcbda
https://scholars.lib.ntu.edu.tw/handle/123456789/632146
Abstract
A furnace-free inductively coupled plasma chemical vapor deposition (ICP-PECVD) system, which does not require sample heating, was used to grow graphene at a temperature below 300 °C. This studies have found that under low-temperature PECVD growth conditions, liquid precursors are more suitable for preparing low-temperature graphene precursors than gaseous precursors.​​​​ Hence, benzene is used as a carbon precursor to obtain a sheet resistance of approximately 1.24 kω sq-1. In this research, it was discovered that the carbon-hydrogen ratio of the precursor molecule is an important factor while using PECVD to grow graphene. This factor affects the quality of graphene and the sheet resistance value - when the carbon-hydrogen ratio for the precursor molecule is 1:1, graphene has the high quality and lowest sheet resistance; when it is less than 1:2, the graphene that cannot be deposited has the worst quality and sheet resistance. Furthermore, we found that methane, a precursor often used to deposit graphene, will etch graphene under low-temperature conditions, and that acetylene can be used as a precursor to deposit graphene. It was further proven that the carbon-hydrogen ratio of the precursor molecules in the PECVD process caused the reduction in the graphene temperature. © 2022 The Author(s). Published by IOP Publishing Ltd.
Subjects
carbon-to-hydrogen ratio; graphene; ICP-PECVD; liquid-based carbon precursors; low temperature
Other Subjects
Deposits; Graphene; Hydrogen; Inductively coupled plasma; Low temperature effects; Molecules; Plasma CVD; Carbon precursors; Carbon-to-hydrogen ratio; High quality; Hydrogen ratio; Inductively coupled plasma chemical vapor deposition; Liquid-based carbon precursor; Lows-temperatures; Precursor molecules; Sample heating; Vapor deposition systems; Temperature
Type
journal article

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