以分子束磊晶法成長氮化鎵系列材料(I)
Date Issued
1999-07-31
Date
1999-07-31
Author(s)
DOI
882215E002024
Abstract
We have studied the growth of
hexagonal GaN and InGaN/GaN
multiple quantum well on sapphire
substrate and cubic GaN on GaAs using
RF plasma assisted gas source molecular
beam epitaxy. On the growth of
hexagonal GaN, near stoichiometric
growth condition was found using in situ
RHEED measurement and was used to
grow high quality GaN epilayer. There
are no defect related transitions found in
room temperature and low temperature
PL measurements. We have also grown
InGaN/GaN multiple quantum wells
which shows clear satellite peaks in
X-ray spectrum and the In composition
of the InGaN is ~6.5%. The cubic phase
GaN has been grown on graded
GaAs1-xNx buffer layer. The PL result of
the cubic GaN features only near
bandgap transitions. Powder X-ray
measurement also shows peaks related
to cubic phase only.
Subjects
RF Plasma assisted
GSMBE
GSMBE
GaN
InGaN
Publisher
臺北市：國立臺灣大學電機工程學系暨研究所
Type
report
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