Oxygen adsorption in the low-temperature on Pb islands on the Pb/Si (111) surface
Date Issued
2010
Date
2010
Author(s)
Huang, Chih-An
Abstract
The adsorption of oxygen on Pb films on the Pb/Si(111) incommensurate surface has been investigated at low temperature using scanning tunneling microscopy. The amount of adsorbed oxygen molecules oscillates with the Pb film thickness ranging from three to six atomic layers. This adsorbed behavior is a result of the quantum size effect. Furthermore, the coverage of adsorbed oxygen also found to be consistent with the electronic Moire` patterns on Pb islands. In addition, by means of in situ variable temperature STM, the thermal stability of oxygen clusters was systematically demonstrated at 137K-175K. It was found that oxygen clusters are stable below 150K. Above 150K, some clusters tend to aggregate or disappear in some specific size range.
Subjects
Scanning Tunneling Microscopy
Quantum Size Effect
Oxygen Adsorption
Pb island
Thermal Stability
Type
thesis
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