Publication:
Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes

cris.lastimport.scopus2025-05-07T21:44:39Z
cris.virtual.departmentElectrical Engineeringen_US
cris.virtual.departmentPhotonics and Optoelectronicsen_US
cris.virtual.orcid0000-0002-1457-3681en_US
cris.virtualsource.department8b90619f-db35-4c8d-badb-d20c9796611a
cris.virtualsource.department8b90619f-db35-4c8d-badb-d20c9796611a
cris.virtualsource.orcid8b90619f-db35-4c8d-badb-d20c9796611a
dc.contributor.authorHuang, HHen_US
dc.contributor.authorYUH-RENN WUen_US
dc.date.accessioned2018-09-10T07:28:06Z
dc.date.available2018-09-10T07:28:06Z
dc.date.issued2009
dc.identifier.doi10.1063/1.3176964
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000268613000006&KeyUID=WOS:000268613000006
dc.identifier.urihttp://scholars.lib.ntu.edu.tw/handle/123456789/347327
dc.languageenen
dc.relation.ispartofJournal of Applied Physics
dc.relation.journalissue2
dc.relation.journalvolume106
dc.sourceAH
dc.titleStudy of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes
dc.typejournal articleen
dspace.entity.typePublication

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