Design of a Dual-band Quantum-well IR Spectrogram Readout Circuit
Date Issued
2015
Date
2015
Author(s)
Yin, Shih-Yao
Abstract
This work presents the design of a readout circuit (ROIC) that provides positive and negative biases to a Dual-band Quantum-well (DQW) IR detectors. These two biases allow two bands of infrared light be detected and passed to the ROIC. The ROIC design contains a buffer direct injection (BDI) with a two-stage amplifier, direct injection (DI), and a shared amplifier. Using a shared amplifier, we can reduce the chip area and power consumption. A prototype is implemented in 90-nm 1P9M CMOS technology and its active area occupies 80 μm × 50 μm. Operating under 1.2V, the ROIC works at 0.3MHz frequency and has a power consumption of 167 μW without considering the output buffer. The injection efficiency of the BDI in this design can be up to 99.99%. The input photocurrent range is from 0.5 μA to 1.2 μA, and output swing approaches to 0.55V.
Subjects
Dual-band
Quantum-well
Readout Circuit
Buffer Direct Injection
Direct Injection
Type
thesis
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