Closed-form physical drain current model considering energy balance equation and source resistance for deep submicron n-channel metal-oxide-semiconductor devices
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
33
Journal Issue
11
Pages
6141-6147
Date Issued
1994
Author(s)
Ma Shyh-Yih
Abstract
This paper reports a concise physical model considering energy transport and source resistance for deep submicron n-channel metal-oxide-semiconductor (NMOS) devices. As verified by the experimental data, the closed-form analytical model shows good accuracy in the IV characteristics.
Other Subjects
Electric fields; Electrons; Mathematical models; Temperature; Thermal conductivity; VLSI circuits; Carrier temperature; Deep submicron; Drift diffusion model; Electron current density; Energy balance equation; Energy transport; N-channel metal oxide semiconductor device; Source resistance; MOS devices
Type
journal article