Preparation and characterization of Cu(In,Ga)Se2 films from nanosized alloy precursors
Journal
Journal of Materials Science: Materials in Electronics
Journal Volume
25
Journal Issue
6
Pages
2795-2802
Date Issued
2014
Author(s)
Abstract
CuInSe2 films were successfully prepared from the nanoparticles that were synthesized via the chemical reduction reaction. In the chemical reduction process using ethylene glycol as the solvent and NaBH4 as a reducing agent, CuIn and Cu2In phases were detected. Upon increasing the molar ratio of the reducing agent to the metal ions, Cu11In 9 and In were formed and coexisted with Cu-In alloys. The obtained nanoparticles were utilized in pastes for coating Cu(In,Ga)Se2 films. The XRD results and Raman spectra elucidated the formation mechanism. During the selenization process, InSe and Cu2-xSe were produced and then reacted with each other to yield CuInSe2. Cu(In,Ga)Se2 was also prepared using the nanoparticles via the reduction reaction. In the route developed herein not only was the temperature of the synthesis of the chalcopyrite compounds reduced to 450 ¢XC, but also the phases of the powders that were used in the synthesis of Cu(In,Ga)Se2 films were controlled. ? 2014 Springer Science+Business Media New York.
Type
journal article