Growth of InGaAs-capped InAs quantum dots characterized by atomic force microscope and scanning electron microscope
Journal
Journal of Nanoparticle Research
Journal Volume
6
Journal Issue
4
Pages
407-410
Date Issued
2004
Author(s)
Abstract
Atomic force microscopy (AFM) is typically used to measure the quantum dot shape and density formed by lattice mismatched epitaxial growth such as InAs on GaAs. However, AFM images are distorted when two dots are situated in juxtaposition with a distance less than the AFM tip width. Scanning electron Microscope (SEM) is much better in distinguishing the dot density but not the dot height. Through these measurements of the growth of InxGa 1-xAs cap layer on InAs quantum dots, it was observed that the InGaAs layer neither covered the InAs quantum dots and wetting layer uniformly nor 100% phase separates into InAs and GaAs grown on InAs quantum dots and wetting layer, respectively.
Subjects
Atomic force microscope; InAs quantum dot; Phase separation; Scanning electron microscope; Surface science
Other Subjects
Atomic force microscopy; Electron beams; Epitaxial growth; Molecular beam epitaxy; Phase separation; Scanning electron microscopy; Semiconducting indium gallium arsenide; Density measurements; InAs quantum dots; Surface science; Wavelength; Semiconductor quantum dots
Type
journal article