Concise analytical model for deep submicron N-channel metal-oxide-semiconductor devices with consideration of energy transport
Journal
Japanese Journal of Applied Physics
Journal Volume
33
Journal Issue
1
Pages
550-553
Date Issued
1994
Author(s)
Ma S.-Y
Abstract
This paper reports a concise analytical model for deep submicron n-channel metal-oxide-semiconductor (NMOS) devices taking energy transport into consideration. It was verified that the I-V characteristics obtained using the analytical model agree with those obtained experimentally. © 1994 Japanese Journal of Applied Physics. All rights reserved.
Subjects
Carrier temperature; Deep submicron; Energy transport; MOS
Other Subjects
Charge carriers; Electric properties; Electron energy levels; Semiconductor device models; Temperature; Deep submicron N channel MOS devices; Energy transport; MOS devices
Type
journal article