Novel MIS Ge-Si quantum-dot infrared photodetectors
Journal
IEEE Electron Device Letters
Journal Volume
25
Journal Issue
8
Pages
544-546
Date Issued
2004
Author(s)
Abstract
The metal-insulator-semiconductor (MIS) Ge-Si quantum-dot infrared photodetectors (QDIPs) are successfully demonstrated. Using oxynitride as gate dielectric instead of oxide, the operating temperature reaches 140 and 200 K for 3-10 and 2-3 μm detection, respectively. From the photoluminescence spectrum, the quantum-dot structures are responsible for the 2-3 μm response with high operation temperature, and the wetting layer structures may be responsible for the 3-10 μm response. This novel MIS Ge/Si QDIP can increase the functionality of Si chip such as noncontact temperature sensing and is compatible with ultra-large scale integration technology. © 2004 IEEE.
SDGs
Other Subjects
Dielectric materials; Emission spectroscopy; High temperature operations; Infrared detectors; Photoluminescence; Semiconducting germanium; Semiconducting silicon; Semiconductor device manufacture; Semiconductor device structures; Semiconductor quantum dots; Transmission electron microscopy; Gate dielectric; Oxynitride; Quantum dot infrared photodetectors; Quantum dot structures; Wetting layer structures; MIS devices
Type
journal article