Resonant Tunneling Device in Si/SiGe Heterostructure
Date Issued
2007
Date
2007
Author(s)
Cheng, Tsung-Han
DOI
zh-TW
Abstract
Silicon/Silicon Germanium(Si/SiGe) has the advantage of being fully compatible with the Si based semiconductor industry. In recent years, SiGe has became much attractive for its properties of high electron mobility, NDR properties and good high-frequency response and has been applied in mobile phone, radio frequency(RF) technology, global positioning system(GPS), power amplifier(PA), wireless LAN, SRAM DRAM technology and so on. Besides, with the progress of the growth technology, many quantum devices with small sizes have been accomplished. In this thesis, one of the quantum devices, the resonant tunneling diodes(RTDs), with Si/SiGe heterostructure operating at low and room temperature are reported.
Subjects
共振穿隧元件
Resonant tunneling diode
Type
thesis