Reducing Temperature Dependence of Semiconductor Lasers Using Nonidentical Multiple Quantum Wells
Resource
Proceedings of SPIE 4651: 137-145
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
4651
Pages
137-145
Date Issued
2002
Date
2002
Author(s)
Abstract
Semiconductor lasers with InGaAsP/InP nonidentical multiple quantum wells (MQWs) for optical communication are experimented to show the improved temperature characteristics. With proper layout of the nonidentical MQWs, the characteristic temperature of the laser diodes is increased. Also, the differential quantum efficiency increases to around 40% for the temperature increasing from 30 degree(s)C to 40 degree(s)C and approximately remains at this value for temperature above 40 degree(s)C. The reason is attributed to the carrier redistribution in the nonidentical MQWs as temperature increases. The change in temperature causes certain QWs to have increased carriers. Therefore their corresponding gain increases to overcome other effects that degrade temperature characteristics. With proper design of nonidentical MQWs, significant improvement on temperature characteristics of semiconductor lasers is possible.
SDGs
Type
conference paper
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