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College of Electrical Engineering and Computer Science / 電機資訊學院
Electronics Engineering / 電子工程學研究所
Fabrication and Development of AlGaN/GaN Heterojunction Fin Structure High Electron Mobility Transistors and Large Area High Current PowerTransistors
Details
Fabrication and Development of AlGaN/GaN Heterojunction Fin Structure High Electron Mobility Transistors and Large Area High Current PowerTransistors
Date Issued
2016
Date
2016
Author(s)
Yang, Min
DOI
10.6342/NTU201602886
URI
http://ntur.lib.ntu.edu.tw//handle/246246/276393
Subjects
FinFET
HEMT
short channel effects
threshold voltage
enhancement mode
Type
thesis
File(s)
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Name
ntu-105-R03943114-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):003d28dc6c686acb9793fde9d46ecc5a
