Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
Details
Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
Journal
Applied Physics Letters
Journal Volume
90
Journal Issue
1
Date Issued
2007
Author(s)
CHEE-WEE LIU
Peng, C.-Y.
Yuan, F.
Yu, C.-Y.
Kuo, P.-S.
Lee, M.H.
Maikap, S.
Hsu, C.-H.
CHEE-WEE LIU
DOI
10.1063/1.2400394
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-33846096826&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/332388
Type
journal article