High fosc/fT 毫米波CMOS壓控振盪器
High fosc/fT Millimeter-wave CMOS VCO
Date Issued
2006
Date
2006
Author(s)
Luo, Tang-Nian
DOI
en-US
Abstract
Recently the RFIC designed for 60 GHz applications has attracted growing interest worldwide because of the availability of the unlicensed 7 GHz bandwidth and numerous opportunities. An integrated 1-V, 49 GHz CMOS voltage-controlled-oscillator (VCO) is developed for the emerging 60-GHz UWB applications is presented in this paper. The VCO implemented in a commercial 0.18μm CMOS technology of which the maximum cut-off frequency, fT, is 60 GHz. For power consideration, the circuit biased at the cut-off frequency is about 55 GHz which lead to the VCO achieves a high fosc/fT approximate to 0.9. The core VCO circuitry consumes 4 mW of power and occupies only 90 μm × 120 μm of the silicon estate. The high quality-factor line inductors and NMOS varactors are used to construct the LC-resonators. The measured phase noise at 1 MHz offset from 49 GHz is -96 dBc/Hz. The low phase noise combined with low power consumption leads to an excellent Figure-of-Merit (FOM) of -184 dBc/Hz, which is the best of the fundamental CMOS VCOs above 40GHz.
In Chapter 1, the introduction of the 60 GHz applications and proposed RF front-end receiver architecture are presented. The basic concepts and topologies of the oscillators are expounded in Chapter 2. The VCO phase noises caused by thermal and flicker noise are present in Chapter 3. The simulation and measurement results are shown in Chapter 4, followed by the conclusion.
Subjects
壓控振盪器
線型電感
CMOS VCO
line inductor
FOM
Type
thesis
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