Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET
Journal
IEEE Transactions on Nanotechnology
Journal Volume
10
Journal Issue
2
Pages
325-330
Date Issued
2011
Author(s)
Abstract
This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poissons equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (TBI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined. © 2006 IEEE.
Subjects
Electrostatic integrity; germanium; germanium-on-nothing (GeON); Poissons equation; silicon-on-nothing (SON); ultrathin body (UTB)
Other Subjects
Analytical solutions; Buried insulators; Channel device; Channel length; Channel thickness; Electrostatic integrity; MOS-FET; MOSFETs; Poissons equation; Silicon-on-nothing; silicon-on-nothing (SON); Subthreshold swing; Ultra-thin-body; ultrathin body (UTB); Electrostatic devices; Electrostatics; MOSFET devices; Germanium
Type
journal article