Photoresponse of homostructure WSe2 rectifying diode
Journal
AIP Advances
Journal Volume
9
Journal Issue
7
Date Issued
2019
Author(s)
Abstract
The WSe2 homostructure rectifying diode is demonstrated, p-type and n-type WSe2 regions were formed by adopting different layer WSe2 thicknesses. Typically, the common way to fabricate two dimensional material based diode is to use heterostructure by stacking two different carrier type and band gap energies materials. However, there is always lattice mismatch at the junction, leading to the degraded photoresponse of the diodes. In order to reduce the problems of heterostructure diode, layer thickness dependent band gap energy of WSe2 is reported and applied to fabricate homostructure diode. The ideality factor of the current-voltage characteristic is 1.64 and the current rectification ratio can reach to 103. The optical properties of the diode, including fill factor 45.7%, responsivity 16.02 mA/W and EQE 3.06% are reported. It is concluded that the WSe2 homojunction diode can be applied in photodetectors, switches, solar cells etc. © 2019 Author(s).
SDGs
Other Subjects
Current voltage characteristics; Diodes; Electric rectifiers; Energy gap; Lattice mismatch; Optical properties; Band gap energy; Current rectifications; Different layers; Heterostructure diodes; Homojunction diodes; Ideality factors; Layer thickness; Two-dimensional materials; Selenium compounds
Type
journal article