GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
Journal
Electronics Letters
Journal Volume
45
Journal Issue
13
Pages
682-683
Date Issued
2009-06
Author(s)
Abstract
A GaAs0.7Sb0.3/GaAs type-II quantum-well laser with a InAs quantum-dot (QD) layer adjacent to the well is reported. The laser shows much lower threshold current density, lower internal loss and higher characteristic temperature than the device without adjacent QDs. The better performances are attributed to additional dimensional confinement, resulting from a spatial potential fluctuation induced by the adjacent QDs, for carriers in the active region of the laser. © The Institution of Engineering and Technology 2009.
SDGs
Type
journal article