Dynamics of transient hole doping in epitaxial graphene
Journal
PHYSICAL REVIEW B
Journal Volume
105
Journal Issue
20
Date Issued
2022
Author(s)
Abstract
This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices postexposure were performed with transport temperatures between 300 and 1.5 K. Ambient conditions are applied to nontransport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements.
Subjects
HALL RESISTANCE STANDARDS; ADSORPTION; ELECTRON; DEVICES; PHOTODETECTOR; GENERATION; SCATTERING; TRANSPORT; WATER
Other Subjects
Graphene; Optical properties; Ambient conditions; Desorption process; Electrical and optical properties; Epitaxial graphene; Hole-doping; Laboratory conditions; Measurements of; Most likely; Post-exposure; Time-scales; Graphene devices
Publisher
AMER PHYSICAL SOC
Type
journal article