Monte Carlo simulation of carrier dynamics in semiconductors with compositional fluctuations
Journal
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Date Issued
2006
Author(s)
Abstract
Carrier dynamics in InGaN of compositional fluctuations is studied with Monte Carlo simulation of time-resolved photoluminescence. Clustered structures lead to a minimum in the photon energy-dependent photoluminescence decay time that is consistent with experimental data.
SDGs
Type
conference paper