Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity
Journal
2003 International Semiconductor Device Research Symposium, ISDRS 2003
Pages
18-19
Date Issued
2003
Author(s)
Pei, Z.
Shi, J.-W.
Hsu, Y.-M.
Yuan, F.
Liang, C.-S.
Liu, C.W.
Pan, T.-M.
Lu, S.C.
Hsieh, W.-Y.
Tsai, M.-J.
Abstract
In this paper, we discuss about the SiGe phototransistors (HPT) with SiGe/Si multiple quantum well (MQW) absorption layers and integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity have been demonstrated. The properly designed non-ideal (nkT) base current can increase the speed of HPT, and have an avalanche bias with extremely high gain. The bandwidth of 3 GHz at normal bias is obtained with transistor's f/sub T/ of /spl sim/ 70 GHz. The integrated photoreceiver using commercial SiGe/Si HBT foundry is feasible.
SDGs
Type
conference paper