Synergistic Impact of Random Phase Distribution and Polarization Strength Variations on FeFET Across Grain Sizes and Ferroelectric Percentages
Journal
2025 Silicon Nanoelectronics Workshop (SNW)
Start Page
108-109
Date Issued
2025-06-08
Author(s)
Tseng, Yi-Ming
Abstract
The integration of ferroelectric (FE) layers in FeFETs introduces additional sources of variability, notably random phase distribution (RPD) and polarization strength variation (PSV). This work presents a systematic TCAD-based investigation into the synergistic effects of RPD and PSV on FeFET electrical characteristics across varying grain sizes and FE material percentages. At a grain size of 20 nm, the threshold voltage (VT) variability exhibits a non-monotonic trend, peaking at 50% FE percentage with a 2.1 × increase in standard deviation compared to the 100% FE case. This is attributed to discontinuous FE paths formed at intermediate FE densities. In contrast, at a 4 nm grain size, continuous FE paths are preserved across all FE ratios, and variability is dominated by PSV, showing only a ~1.3× increase in standard deviation from 100% to 25% FE percentages. These findings highlight the critical role of accounting for both RPD and PSV in the design and optimization of FeFETs for reliable operation in in-memory computing (IMC) applications.
Publisher
IEEE
Type
conference paper