High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm)
Journal
International Electron Devices Meeting, IEDM
Pages
297-300
Date Issued
2002
Author(s)
Pei, Z.
Liang, C.S.
Lai, L.S.
Tseng, Y.T.
Hsu, Y.M.
Chen, P.S.
Lu, S.C.
Liu, C.M.
Tsai, M.-J.
Type
conference paper