Publication: Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides
| cris.lastimport.scopus | 2025-05-08T22:17:17Z | |
| cris.virtual.department | Electrical Engineering | en_US |
| cris.virtual.department | Electronics Engineering | en_US |
| cris.virtual.orcid | 0000-0001-9688-0812 | en_US |
| cris.virtualsource.department | d18091e7-be53-4dda-8b3d-eb34dffdaaa8 | |
| cris.virtualsource.department | d18091e7-be53-4dda-8b3d-eb34dffdaaa8 | |
| cris.virtualsource.orcid | d18091e7-be53-4dda-8b3d-eb34dffdaaa8 | |
| dc.contributor.author | Cheng, J.-Y. | en_US |
| dc.contributor.author | Lu, H.-T. | en_US |
| dc.contributor.author | Yang, C.-Y. | en_US |
| dc.contributor.author | Hwu, J.-G. | en_US |
| dc.contributor.author | JENN-GWO HWU | zz |
| dc.creator | Cheng, J.-Y.;Lu, H.-T.;Yang, C.-Y.;Hwu, J.-G. | |
| dc.date.accessioned | 2018-09-10T08:09:40Z | |
| dc.date.available | 2018-09-10T08:09:40Z | |
| dc.date.issued | 2010 | |
| dc.identifier.doi | 10.1109/ICSICT.2010.5667446 | |
| dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-78751524776&partnerID=MN8TOARS | |
| dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/356362 | |
| dc.language | en | en |
| dc.relation.ispartof | ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology | |
| dc.relation.pages | 844-846 | |
| dc.source | AH | |
| dc.title | Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides | |
| dc.type | conference paper | |
| dspace.entity.type | Publication |