Focused-Ion-Beam-Deposited Pt Contacts on ZnO Nanowires
Resource
ECS transactions, 16, 13-20
Journal
ECS Transactions
Pages
13-20
Date Issued
2009
Date
2009
Author(s)
He, Jr-Hau
Chang, Pei H.
Chen, Cheng-Ying
Tsai, Kun-Tonh
Abstract
We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2×10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized. ©The Electrochemical Society.
SDGs
Type
conference paper
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