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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy
Details
Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy
Journal
Journal of Electronic Materials
Journal Volume
32
Journal Issue
4
Pages
244-248
Date Issued
2003-04
Author(s)
G. R. Chen
H. H. Lin
J. S. Wang
D. K. Shih
HAO-HSIUNG LIN
DOI
10.1007/s11664-003-0216-x
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/304032
Type
journal article
