The Engineering Anlysis of Ultra Precision Grinding of Silicon Wafers
Date Issued
2005
Date
2005
Author(s)
Chang, Ming-Tsan
DOI
zh-TW
Abstract
In the semiconductor industry, the grinding process is recently introduced in a wide variety of fields such as the fabrication of silicon wafer, the silicon wafer recycling process, and the silicon wafer thinning process due to its high yielding rates and the resulting qualities of the products. The superior characteristics of the ground wafer are usually produced through its excellent physical properties. However, the warp of ground silicon wafer, which is one of the most serious problems, should be carefully controlled. In this thesis, the physical properties of ground wafer are analyzed to find the factors which affect the results. The residual stress of the silicon wafer is measured and estimated by reciprocal lattice unit of X-ray diffraction measure. The grinding parameters which decide the residual stress and physical properties of ground silicon wafers are analyzed through design of experiments and the optimum grinding conditions are then sought. Also, the correlation between the grinding temperature, residual stress and the warp of ground wafers is investigated. Finally, the residual stress and physical properties are measured and compared to investigate the effects of the polishing process which follows the grinding process.
Subjects
矽晶圓
輪磨
殘留應力
翹曲
silicon wafer
grinding
residual stress
warp
Type
thesis
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