Focused ion beam induced nanojunction and defect doping as a building block for nanoscale electronics in GaN nanowires
Journal
Journal of Physical Chemistry C
Journal Volume
114
Journal Issue
36
Pages
15260-15265
Date Issued
2010
Author(s)
Abstract
Two GaN nanowires are formed as a nanojunction using focused ion beam (FIB) assisted implantation of Ga+ self-ion. FIB-induced metallization and electrical isolation by cutting the nanowires are also used for the completion of contact formation. Defect doping, employing the formation energies of vacancies and interstitials, in the energetic nonequilibrium ion beam processing is successfully attempted for the formation of a p-type GaN nanowire. Detailed transport measurements of welded nanojunctions and rectification in the form of p−n junctions for two nanowires are reported in this process of in situ nanoengineering. The rectification is also reported for the p−n junction formed in a single nanowire. This is a unique technique demonstrating an all FIB nanoelectronic fabrications for future miniaturization of devices.
Publisher
American Chemical Society
Type
journal article