Turn-on transient imposed extrinsic base consideration in BiNMOS transistors
Resource
Custom Integrated Circuits Conference, 1990., Proceedings of the IEEE 1990
Journal
Custom Integrated Circuits Conference, 1990.
Pages
-
Date Issued
1990-05
Date
1990-05
Author(s)
Chen, Yen-Wen
DOI
N/A
Abstract
A detailed two-dimensional numerical simulation study on the bipolar devices in the BiCMOS circuit environment during turn-on transient is presented. The unique charge build-up and removal phenomenon in the bipolar device determines the switching speed of the BiNMOS devices. The tradeoffs in designing the extrinsic base in terms of the switching behavior are described. It is shown that the structure with the extrinsic base p+ area farthest from the intrinsic base area has the best switching speed, owing to the largest overshoot in the base voltage initially and the lateral base effects.>
Type
journal article
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