Self-assembled nanowires of organic n-type semiconductor for nonvolatile transistor memory devices
Journal
Advanced Functional Materials
Journal Volume
22
Journal Issue
20
Pages
4352-4359
Date Issued
2012
Author(s)
Abstract
Organic nonvolatile transistor-type memory (ONVM) devices are developed using self-assembled nanowires of n-type semiconductor, N,N'-bis(2-phenylethyl)- perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI). The effects of nanowire dimension and silane surface treatment on the memory characteristics are explored. The diameter of the nanowires is reduced by increasing the non-solvent methanol composition, which led to the enhanced crystallinity and high field-effect mobility. The BPE-PTCDI nanowires with small diameters induce high electrical fields and result in a large memory window (the shifting of the threshold voltage, ΔV th). The ΔV th value of BPE-PTCDI nanowire based ONVM device on the bare substrate can reach 51 V, which is significantly larger than that of thin film. The memory window is further enhanced to 78 V with the on/off ratio of 2.1 × 10 4 and the long retention time (10 4 s), using a hydrophobic surface (such as trichloro(phenyl)silane-treated surface). The above results demonstrate that the n-type semiconducting nanowires have potential applications in high performance non-volatile transistor memory devices. Organic n-channel N,N'-bis(2- phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPI-PTCDI) nanowire based nonvolatile organic field-effect transistor (OFET) memory devices exhibit significantly larger memory windows than those of thin films. The memory windows are enhanced with a smaller nanowire diameter or a more hydrophobic self-assembled monolayer. The potential applications of organic semiconducting nanowires for advanced transistor memory devices are revealed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
SDGs
Type
journal article