A SiGe low noise amplifier for 2.4/5.2/5.7GHz WLAN applications
Resource
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Journal
IEEE International Solid-State Circuits Conference
Date Issued
2003
Author(s)
Abstract
A 355 /spl mu/m /spl times/ 155 /spl mu/m LNA in 0.35 /spl mu/m SiGe BiCMOS uses a simple bias switching technique to operate in all three WLAN bands. Noise figure is 2.73 dB at 2 V. Measurements of S parameters, power gain and collector current are also reported.
SDGs
Type
conference paper
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