Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation
Journal
?Materials Transactions
Journal Volume
45
Journal Issue
2
Pages
435-439
Date Issued
2004
Author(s)
S. Muto
Abstract
Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.
SDGs
Publisher
The Japan Institute of Metals and Materials
Type
journal article