Optical Studies on Pre-strained InGaN/GaN Quantum Wells
Date Issued
2006
Date
2006
Author(s)
Lin, Yu-Li
DOI
en-US
Abstract
In this research, we systematically study the optical characteristics and associated nanostructures of three InGaN/GaN multiple quantum-well (QW) samples of different QW structures. In two of the samples, a low-indium InGaN/GaN QW is grown before five high-indium ones, which are grown under the same conditions as those for growing the five QW s in another sample (the control sample). Photoluminescence (PL) measurement shows that the spectral red-shift of the QWs designated for green emission into the orange range in a light-emitting diode by adding a violet-emitting QW at the bottom. The cathodo-luminescence (CL) spectra indicate that the long-wavelength QWs close to the violet one were strongly influenced by this added QW and mainly emit the orange photons. From the calibrations of the average indium contents of those QWs based on the strain state analysis images, it is found that the QWs close to the low-indium one have higher indium contents than those in the control sample. Such an increase of indium incorporation is attributed to the pre-strain effect of the low-indium QW on the barrier layer right above it. The pre-strain effect diminishes along the growth of more QWs and is weak between the high-indium QWs, in which the formation of indium-rich clusters releases the strain.
Subjects
預施
應力
氮化銦鎵
氮化鎵
量子井
光學
Optical
Pre-strained
strained
InGaN
GaN
Quantum Wells
Type
thesis
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