The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages

Journal

AIP Advances

Journal Volume

7

Pages

55105

Date Issued

2017

Author(s)

C.-P. Hsieh

C.-C. Lee

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/404567

Type

journal article