High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications
Journal
ACS Applied Materials and Interfaces
Journal Volume
9
Journal Issue
26
Pages
21872-21878
Date Issued
2017
Author(s)
Pathak, A.
Chiou, G.R.
Gade, N.R.
Usman, M.
Mendiratta, S.
Luo, T.-T.
Tseng, T.W.
Chen, F.-R.
Chen, K.-H.
Lu, K.-L.
Abstract
The self-assembly of a samarium-based metal-organic framework [Sm2(bhc)(H2O)6]n (1) in good yield was achieved by reacting Sm(NO3)3·6H2O with benzenehexacarboxylic acid (bhc) in a mixture of H2O-EtOH under hydrothermal conditions. A structural analysis showed that compound 1 crystallized in a space group of Pnmn and adopted a 3D structure with (4,8) connected nets. Temperature dependent dielectric measurements showed that compound 1 behaves as a high dielectric material with a high dielectric constant (κ = 45.1) at 5 kHz and 310 K, which is comparable to the values for some of the most commonly available dielectric inorganic metal oxides such as Sm2O3, Ta2O5, HfO2, and ZrO2. In addition, electrical measurements of 1 revealed an electrical conductivity of about 2.15 × 10-7 S/cm at a frequency of 5 kHz with a low leakage current (Ileakage = 8.13 × 10-12 Amm-2). Dielectric investigations of the Sm-based MOF provide an effective path for the development of high dielectric materials in the future. © 2017 American Chemical Society.
Subjects
dielectric; high-κ; hydrothermal; metal-organic framework; samarium
Other Subjects
Crystalline materials; Gate dielectrics; Hafnium oxides; Metals; Samarium; Dielectric measurements; Electrical conductivity; Gate dielectric applications; High dielectric constants; High dielectric materials; hydrothermal; Hydrothermal conditions; Metal organic framework; Dielectric materials
Publisher
American Chemical Society
Type
journal article