Directly probing the carrier transfer length in 2D-material transistors
Journal
Nature
Journal Volume
655
Journal Issue
8122
Start Page
350
End Page
356
ISSN
0028-0836
1476-4687
Date Issued
2026-07-01
Author(s)
Yang, Zi-Liang
Huang, Bo-Chao
Lin, Yu-Kuan
Lin, Yan-Ruei
Hsu, Hung-Chang
Chen, Hao-Yu
Wan, Yi
Tseng, Kai-Wei
Yang, Shu-Ting
Lo, Han-Chieh
Huang, You-Jia
Zheng, Fangyuan
Yang, Ni
Meng, Wanqing
Min, Jiacheng
Huang Po-Cheng
Lan, Yann-Wen
Li, Lain-Jong
Abstract
Transistors based on two-dimensional (2D) materials are on the roadmap for the beyond 1 nm logic technology node1. This stems from their ultrathin thickness and defect-free surfaces, granting remarkable electrostatic gate control2, 3, 4–5. The physical channel length of 2D transistors may eventually reach <10 nm for advanced node devices. However, the equally important scaling limit for metal contacts remains unknown because of the lack of technology to directly probe the carrier injection region in contact areas. Here we use cross-sectional scanning tunnelling microscopy to directly measure the carrier transfer length as approximately 2.0 nm at the contact region of a bismuth-contacted monolayer MoS2 transistor. This approach allows contact scaling constraints to be determined, providing information for the development of future ultra-scaled electronic devices.
Publisher
Springer Science and Business Media LLC
Type
journal article