Current Stability of Active Matrix Heterostructure Field-Effect Transistors Switch Circuits Integrated with GaN Light Emitting Diode
Date Issued
2006
Date
2006
Author(s)
shih, Ghien-an
DOI
zh-TW
Abstract
我們提出一個新穎異質接面場效電晶體(HFET)主動電路整合二極體晶片，模擬結果包含電流開關電路對於二極體製程及電晶體製程變因的補償效果。我們利用Microarray 發光二極體小尺寸的優點，可以有效改善發光散熱問題，並且有較大的彈性可以應用於照明和顯示應用。我們希望整合Microarray二極體電路晶片，將應用延伸至RGB-LED單一像素的使用，利用電路回授方式穩定發光二極體電流源，並且比較被動方式驅動二極體的缺點，我們利用主動電路提供時序(PWM)電流，透過時序長短來提供不同灰階的發光表現。這是第一次將HFET主動電路整合於氮化鎵(GaN)發光二極體，這提供了另一種方式改善二極體表現，並且有效的降低外部複雜電路的成本。
We demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active matrix circuit for an LED ( Light emitting diode ) micro-display. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations.
Subjects
發光二極體
整合開關電路
LED
Switch circuit
Type
thesis
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