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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
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The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
Journal
Journal of Applied Physics
Journal Volume
116
Journal Issue
11
Date Issued
2014
Author(s)
Yang, Tsung-Jui
Shivaraman, Ravi
Speck, James S.
YUH-RENN WU
DOI
10.1063/1.4896103
URI
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000342837000004&KeyUID=WOS:000342837000004
http://scholars.lib.ntu.edu.tw/handle/123456789/384950
Type
journal article
