Rutherford Backscattering and Corresponding Studies on InGaN, ZnO, and InN thin films
Date Issued
2010
Date
2010
Author(s)
Chung, Yee-Ling
Abstract
Rutherford Backscattering Spectrometry (RBS) technology was employed to study the structure of nanometer scale InGaN/GaN grown on ZnO substrate. Through penetrating simulation, Zn diffusion from substrate and interlayer diffusion between InGaN/GaN and GaN/ZnO have been clearly revealed and determined quantitatively. The fuzz of InGaN and GaN layers is about 7 nm and the fuzz of GaN and ZnO layers is about 9 nm.
InxGa1-xN layers have been grown on ZnO substrates by metalorganic chemical vapor deposition utilizing a low temperature grown thin GaN buffer. InGaN layers were grown at temperatures ranging from 656 to 736°C. Rutherford Backscattering technology was employed to analyze this structure. Through simulation, the detailed information on the grown InGaN layers containing higher In composition in the higher growth temperature is obtained, which are suitable for wide light range InGaN multiple quantum well light emitting diode device applications.
A series of ZnO thin films with different thicknesses grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) have been studied by different characterization techniques. The optical properties are investigated by photoluminescence (PL), optical transmission (OT) and 1st order derivatives, various angle scanning ellipsometry (VASE). Rutherford Backscattering (RBS) shows the atomic Zn:O ratios with a few percentage aviation from 1:1, and thicknesses in range of 10~230 nm, roughness layer with 10~30nm, which are corresponding to results from atomic force microscopy (AFM), and scanning electron microscopy (SEM). The optical and structure characterization measurements have confirmed the good quality of these epitaxial ZnO materials.
We also report the optical properties of a series of InN thin films grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different Nitrogen plasma power. It was confirmed that the films quality improved by decreasing the plasma power of Nitrogen. A series of characterization techniques, including Hall, photoluminescence, Rutherford backscattering, Raman scattering, and scanning electron microscopy have been employed to study these InN films. In these experiments, it was obvious that Eg of InN depends on the crystal growth condition of plasma level. The alloy compositions and thickness were accurately determined using Rutherford backscattering spectrometry and it can obtained that the InN film grown under lower plasma power level is shown with better film uniformity.
Subjects
InGaN
ZnO
InN
RBS
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-99-R97941107-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):0cbd99fcf75d44390db15b2729119f15