Study of Metal Silicide amd Nanomaterials for Optoelectronic Device Applications
Date Issued
2006
Date
2006
Author(s)
Hsu, Tsung-Han
DOI
zh-TW
Abstract
Metal silicide and photonic crystals play important roles in optoelectronic devices. In this thesis, we study optical properties of these two kinds of materials. The first part of thesis is metal silicide, titanium silicide with. Titanium silicide is very suitable as gate materials in next-generation photo detector for its good thermal stability and lowest sheet resistance among all of metal silicides. We characterize the optical properties , reflective index and extinction coefficient, of titanium silicide by ellipsometryin the visible regime for photodetector application. Since ArF laser (193nm) and F2 laser (157nm) are light sources of optical lithography for the generation of less than 100 nm , we also characterize optical constants of titanium silicide in the 193nm and 157nm wavelength regimes. We find titanium silicide has high reflectance in the wavelength regime 450nm~750nm, which is an important range for photodetector. Therefore, we designe and fabricate an antireflective coatings for wavelength between 450nm~750nm, then the reflectance in the range is reduced to less than 5%. For optical lithography application, we also fabricate bottom antireflective coatings of titanium silicide in 193nm and 157nm for the reduction of standing-wave effect..
In the photonic crystals study, we use well-mixed colloidal nanomaterial in different sizes to form binary opals. By this method, we can fine-tune the photonic bandgap within 1~2nm. Besides, by changing the size and contents of the small colloids, we can be aware of how the smaller one affects the bandgap and crystal structure of binary opals. We also find the smallest size of doped collide has significant effect.
Subjects
金屬矽化物
光學常數
抗反射層
光子晶體
光子能階
silicide
optical constants
anti-reflective coating
photonic crystal
photonic bandgap
Type
thesis