Rectified Schottky Diodes Based on PEDOT:PSS/InGaZnO Junctions
Journal
Organic Electronics
Journal Volume
48
Pages
206-218
Date Issued
2017
Author(s)
Abstract
We report the successful use of the high-work-function, high-conductivity transparent conducting polymer PEDOT:PSS as the Schottky contact to form the Schottky junction (and thus Schottky diode) with the n-type semiconductor a-IGZO. The Schottky didoes exhibited a low apparent turn-on voltage, a high rectification ratio of >105 at ±1 V, and a decent ideality factor of ∼1.5–1.6. Detailed junction properties were systematically analyzed from J-V and C-V characteristics of the diodes. We also demonstrated the applications of PEDOT:PSS/a-IGZO Schottky junctions to various types of Schottky diodes, including the flexible, the transparent, and the flexible transparent PEDOT:PSS/a-IGZO Schottky diodes, by using different substrates and different counter electrodes.
SDGs
Type
journal article