Ultra-low-voltage SOI CMOS Inverting Driver Circuit Using Effective Charge Pump Based on Bootstrap Technique
Journal
Electronics Letters
Journal Volume
39
Journal Issue
2
Pages
183-185
Date Issued
2003-01
Author(s)
J. H. T. Chen
Abstract
A novel SOI CMOS inverting driver circuit is reported using a concise charge pump based on bootstrap technique (CPBT) for ultra-low-voltage (ULV) VLSI applications. The ULV driver with CPBT composed of a bootstrap capacitor, a pre-charge device and a driver device, provides a four times speed improvement as compared to a counterpart circuit using the direct bootstrap technique at an output load of 100 fF operating at 0.5 V.
Other Subjects
Capacitors; Electric potential; Equivalent circuits; Silicon on insulator technology; VLSI circuits; Bootstrap technique; Charge pump; Driver circuit; Ultralow voltage; CMOS integrated circuits
Type
journal article