Femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers
Journal
Applied Physics Letters
Journal Volume
63
Journal Issue
1
Pages
96-98
Date Issued
1993
Author(s)
Abstract
We report the first investigation of femtosecond gain dynamics in InGaAs/AlGaAs strained-layer single-quantum-well diode lasers using a multiple-wavelength pump probe technique. Studies demonstrate that carrier temperature changes from free-carrier absorption and stimulated transitions strongly govern transient gain dynamics. The energy of the pump wavelength relative to the transparency point determines which processes dominate the transient response. Stimulated carrier cooling is observed for the first time in these materials.
SDGs
Type
journal article